"We will do even better."
This was said by Song Jae-hyuk, chairman of the Korea Semiconductor Industry Association and president of Samsung Electronics' DS Division, at the 28th Semiconductor Daejeon (SEDEX 2026) held on the 14th at COEX in Gangnam-gu, Seoul.
Song made this remark while listening to examples of domestic fabless (semiconductor design) companies utilizing TSMC processes at the booth of A-Ji Land, a design partner of TSMC, the world's No. 1 foundry (semiconductor contract manufacturing) company.
This came immediately after Lee Jong-min, president of Asicland, said that his company choose between Samsung Electronics' foundry and TSMC depending on the product to conduct development and Yangsan.
At the event, attendees included Song, Rep Lee Jun-seok, and Ahn Hyeon, president of SK Hynix's Development Division, among others, who examined the technologies of major semiconductor companies. This year's exhibition was held at its largest scale ever, with over 300 companies participating in memory semiconductors (hereinafter referred to as memory), system semiconductors, and materials, components and equipment. In particular, Samsung Electronics and SK Hynix showcased next-generation AI (artificial intelligence) semiconductor technologies, including High Bandwidth Memory (HBM).
Attendees such as Song visited the SK Hynix booth after stopping by Dongjin Semichem and Shinsegi A&G. As the explanation from the SK Hynix side began, Song said, "I will listen today in my capacity as chairman of the industry association," eliciting laughter. At the entrance of the exhibition hall, a humanoid robot performed a celebratory show, prompting Song to quietly express admiration while watching intently.
In the exhibition hall, a physical Vera Rubin superchip from NVIDIA and an HBM wafer bearing the autograph of Jensen Huang, CEO of NVIDIA, attracted the attention of visitors. When Lee (Rep.) showed interest in front of a High Bandwidth Flash (HBF) model, An Hyeon (President) personally provided a detailed explanation. A question-and-answer session on memory stacking technology also took place. During this process, An (President) explained to Lee (Rep.), "HBM is a method that vertically stacks multiple DRAM dies and connects them with Through-Silicon Vias (TSV)." This technology was previously introduced in the keynote speech by An (President). He stated, "We no longer view memory merely as a component itself," adding, "Beyond HBM, we will build new memory hierarchies such as 3D stacked DRAM and HBF."
At the subsequently visited Samsung Electronics booth, AI semiconductor technologies encompassing memory, foundry, and system semiconductors were comprehensively displayed. Samsung Electronics unveiled next-generation memory technologies, including HBM4E, the 7th generation of HBM, zHBM which reduces the distance between processors and memory, and LPDDR (Low Power DRAM)-PIM which integrates computing functions into memory. In the foundry sector, it exhibited a 2-nanometer (nm, one-billionth of a meter) Gate-All-Around (GAA) wafer, a 4-nanometer base die for HBM4E, and 3D advanced packaging technology. In the system semiconductor sector, it showcased the Exynos 2600 mobile application processor (AP) and the ISOCELL HPC image sensor, demonstrating the scalability of its AI semiconductor technologies.
In the newly established 'Semiconductor Cluster Zone' this year, plans for the development of the Gyeonggi Yongin National Industrial Complex, involving an investment of approximately 360 trillion won, were displayed. Samsung Electronics aims to begin operations of its first production line in October 2029. The 'Mutual Cooperation Zone,' which summarizes support programs for partners and results of co-prosperity, also drew attention. Additionally, attendees such as Lee Song (President) concluded their tour by sequentially visiting the booths of SEMES, Mico Group, and Comico.
Meanwhile, after finishing the tour, Song (President) briefly answered "We are working hard" when asked by reporters about the development progress of Samsung Electronics' 4F² (four F-squared).
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